Product Summary

The AO4420 is a N-Channel Enhancement Mode Field Effect Transistor. The AO4420 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics. This device is suitable for use as a synchronous switch in PWM applications.

Parametrics

AO4420 absolute maximum ratings: (1)Pulsed Drain Current:60A; (2)Power Dissipation:TA=25℃:3.1W, TA=70℃:2W; (3)Gate-Source Voltage:±12V; (4)Drain-Source Voltage:30V; (5)Continuous Drain Current:TA=25℃:13.7A, TA=70℃:9.7A; (6)Junction and Storage Temperature Range:-55℃ to 150℃.

Features

AO4420 features: (1)VDS (V) = 30V; (2)ID = 13.7A; (3)RDS(ON) < 10.5mΩ (VGS = 10V); (4)RDS(ON) < 12mΩ (VGS = 4.5V).

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
AO4420
AO4420

Other


Data Sheet

Negotiable 
AO4420A
AO4420A


MOSFET N CH 30V 13.7A SOIC 8

Data Sheet

0-1: $0.46
1-25: $0.32
25-100: $0.28
100-250: $0.24
250-500: $0.21
500-1000: $0.16
AO4420L
AO4420L

Other


Data Sheet

Negotiable