Product Summary

The 2SD1898T100R is an epitaxial planer type NPN silicon transistor.

Parametrics

2SD1898T100R absolute maximum ratings: (1)Collector-base voltage, VCBO: 120V; (2)Collector-emitter voltage, VCEO: 80V; (3)Emitter-base voltage, VEBO: 5V; (4)Collector current, IC: 1A (DC); (5)Collector current, IC: 2A (Pulse); (6)Junction temperature, Tj: 150℃; (7)Storage temperature, Tstg: -55 to +150℃.

Features

2SD1898T100R features: (1)High VCEO, VCEO=80V; (2)High IC, IC=1A (DC); (3)Good hFE linearity; (4)Low VCE (sat); (5)Complements the 2SB1260 / 2SB1181.

Diagrams

2SD1898T100R Dimensions

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
2SD1898T100R
2SD1898T100R

ROHM Semiconductor

Transistors Bipolar (BJT) NPN 80V 1A

Data Sheet

0-1: $0.27
1-25: $0.22
25-100: $0.16
100-500: $0.11
500-1000: $0.09
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(USD)
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