74LVC1G57GW.1250

Si-gate CMOS device, SOT363, 1.65 V to 5.5 V, ±24 mA, 300 mW

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PartNumber:: 74LVC1G57GW.1250

Brand:: NXP Semiconductors - nxp | Pack: SOT | D/C: 11+

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Products Upload time: 2012-08-13

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Part Number:74LVC1G57GW.1250
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Product Summary

The 74LVC1G57GW.1250 is a high-performance, low-power, low-voltage, Si-gate CMOS device, superior to most advanced CMOS compatible TTL families. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of the 74LVC1G57GW.1250 in a mixed 3.3 V and 5 V environment. This device is fully specified for partial power-down applications using Ioff. The Ioff circuitry disables the output, preventing the damaging backflow current through the device when it is powered down. The 74LVC1G57GW.1250 provides configurable multiple functions.

Parametrics

74LVC1G57GW.1250 absolute maximum ratings: (1)VCC, supply voltage: -0.5 to +6.5 V; (2)IIK, input clamping current: -50mA max when VI < 0 V; (3)VI, input voltage: -0.5 to +6.5 V; (4)IOK, output clamping current: ±50 mA max when VO > VCC or VO < 0 V; (5)IO, output current: ±50 mA max when VO = 0 V to VCC; (6)ICC, IGND VCC or GND current: ±100 mA; (7)Tstg, storage temperature: -65 +150 ℃ (9)Ptot, total power dissipation: 300 mW when Tamb = -40 ℃to +125 ℃.

Features

74LVC1G57GW.1250 features: (1)Wide supply voltage range from 1.65 V to 5.5 V; (2)5 V tolerant input/output for interfacing with 5 V logic; (3)High noise immunity; (4)ESD protection: HBM JESD22-A114F exceeds 2000 V; MM JESD22-A115-A exceeds 200 V; (5)±24 mA output drive (VCC = 3.0 V); (6)CMOS low power consumption; (7)Latch-up performance exceeds 250 mA; (8)Direct interface with TTL levels; (9)Inputs accept voltages up to 5 V; (10)Multiple package options.