Product Summary

The BAS16TT1 is a silicon switching diode.

Parametrics

BAS16TT1 absolute maximum ratings: (1)Continuous Reverse Voltage VR: 75 V; (2)Recurrent Peak Forward Current IF: 200 mA; (3)Peak Forward Surge Current; (4)Pulse Width = 10μs IFM(surge): 500 mA.

Features

BAS16TT1 features: (1)Capacitance (VR = 0, f = 1.0 MHz) CD: 2.0 pF; (2)Reverse Recovery Time(IF = IR = 10 mA, RL = 50 W) (Figure 1)trr: 6.0 ns; (3)Stored Charge(IF = 10 mA to VR = 6.0 V, RL = 500 W) QS: 45 PC; (4)Forward Recovery Voltage(IF = 10 mA, tr = 20 ns)VFR: 1.75 V.

Diagrams

BAS16TT1 power dissipation

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BAS16TT1
BAS16TT1

ON Semiconductor

Diodes (General Purpose, Power, Switching) 75V 200mA

Data Sheet

Negotiable 
BAS16TT1G
BAS16TT1G

ON Semiconductor

Diodes (General Purpose, Power, Switching) 75V 200mA

Data Sheet

0-1: $0.04
1-25: $0.03
25-100: $0.03
100-500: $0.02