Product Summary

The BAS170W is a silicon schottky diode.

Parametrics

BAS170W absolute maximum ratings: (1)Diode reverse voltage VR: 70 V; (2)Forward current IF: 70 mA; (3)Surge forward current, t ≤10 ms IFSM: 100; (4)Total power dissipation. TS = 97 ℃. Ptot: 250 mW; (5)Junction temperature Tj: 150 ℃; (6)Operating temperature range Top: -55 to 125℃; (7)Storage temperature Tstg: -55 to 150℃.

Features

BAS170W features: (1)General-purpose diode for high-speed switching; (2)Circuit protection; (3)Voltage clamping; (4)High-level detection and mixing.

Diagrams

BAS170W package diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
BAS170WS-V-GS18
BAS170WS-V-GS18

Vishay Semiconductors

Schottky (Diodes & Rectifiers) 70 Volt 70mA 600mA IFSM

Data Sheet

0-1: $0.07
1-10: $0.06
10-100: $0.05
100-250: $0.05
BAS170WS-V-GS08
BAS170WS-V-GS08

Vishay Semiconductors

Schottky (Diodes & Rectifiers) 70mA 70 Volt

Data Sheet

0-1: $0.07
1-10: $0.07
10-50: $0.06
50-100: $0.05
BAS170WS
BAS170WS

Other


Data Sheet

Negotiable 
BAS170W
BAS170W

Other


Data Sheet

Negotiable