(China (Mainland))
Product Summary
The BD236 is a silicon epitaxial-base NPN power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications.
Parametrics
BD236 absolute maximum ratings: (1)Collector-Base Voltage (IE = 0): 60 V; (2)Collector-Base Voltage (RBE = 1KW): 60 V; (3)Collector-Emit ter Voltage (IB = 0): 60 V; (4)Emitter-Base Voltage (IC = 0): 5 V; (5)Collector Current: 2 A; (6)Collector Peak Current: 6 A; (7)Total Dissipation at Tc = 25 ℃: 25 W; (8)Storage Temperature: -65 to 150 ℃; (9)Max. Operating Junction Temperature: 150 ℃.
Features
BD236 electrical characteristics: (1)Collector Cut-off Current (IE = 0): 0.1 mA at VCE = rated VCEO, 2 mA at VCE = rated VCEO, Tc = 150 ℃; (2)Emitter Cut-off Current (IC = 0): 1 mA at VEB = 5 V; (3)Collector-Emitter Sustaining Voltage: 60 V at IC = 100 mA; (4)Collector-Emitter Saturat ion Voltage: 0.6 V at IC = 1 A, IB = 0.1 A; (5)Base-Emitter Voltage: 1.3 V at IC = 1 A, VCE = 2 V; (6)DC Current Gain: 40 at IC = 150 mA, VCE = 2 V, 25 at IC = 1 A VCE = 2 V; (7)Transition frequency: 3 MHz at IC = 250 mA VCE = 10 V.
Diagrams
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 BD236 |
Other |
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BD236STU |
Fairchild Semiconductor |
Transistors Bipolar (BJT) PNP Epitaxial Sil |
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