(China (Mainland))
Product Summary
The BD652 is a PNP silicon power darlington.
Parametrics
BD652 absolute maximum ratings: (1)Collector-base voltage (IE = 0), VCBO: -140V; (2)Collector-emitter voltage (IB = 0), VCEO: -120V; (3)Emitter-base voltage, VEBO: -5 V; (4)Continuous collector current, IC: -8 A; (5)Peak collector current, ICM: -12 A; (6)Continuous base current, IB: -0.3 A; (7)Continuous device dissipation at (or below) 25℃ case temperature, Ptot: 62.5 W; (8)Continuous device dissipation at (or below) 25℃ free air temperature, Ptot: 2 W; (9)Unclamped inductive load energy, 0.5IC2: 50 mJ; (10)Operating junction temperature range, Tj: -65 to +150℃; (11)Storage temperature range, Tstg: -65 to +150℃; (12)Lead temperature 3.2 mm from case for 10 seconds, TL: 260℃.
Features
BD652 features: (1)Designed for Complementary Use with BD645, BD647, BD649 and BD651; (2)62.5 W at 25℃ Case Temperature; (3)8 A Continuous Collector Current; (4)Minimum hFE of 750 at 3 V, 3 A.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BD6522F |
Other |
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Data Sheet |
Negotiable |
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BD652S |
Bourns |
Transistors Darlington 120V 8A PNP |
Data Sheet |
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BD652-S |
Bourns |
Transistors Darlington PNP DARLINGTON 120V 8A |
Data Sheet |
Negotiable |
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BD6528HFV-TR |
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IC PWR MANAGEMENT SWITCH HVSOF6 |
Data Sheet |
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BD6524HFV-TR |
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IC PWR MANAGEMENT SWITCH HVSOF6 |
Data Sheet |
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BD6522F-E2 |
ROHM Semiconductor |
Voltage Detectors / Monitors SWITCH W/REV FLOW PROTECT |
Data Sheet |
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BD6520F-E2 |
ROHM Semiconductor |
Voltage Detectors / Monitors POWER MGMT SWITCH |
Data Sheet |
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BD652 |
Bourns |
Transistors Darlington 62.5W PNP Silicon |
Data Sheet |
Negotiable |
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