BSC022N03SG

OptiMOS Power-Transistor, 30V, 100A, TDSON-8, BSC022N03SG

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Price:: US $0.32~0.33 / piece [Get Latest Price]

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	US $0.32~0.33

PartNumber:: BSC022N03SG

Brand:: Infineon Technologies AG - Infineon | Pack: QFN | D/C: 11+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-08-03

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Part Number:BSC022N03SG
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Product Summary

The BSC022N03SG is an optiMOS Power-Transistor.

Parametrics

BSC022N03SG maximum ratings: (1)Continuous drain current, I D at T C=25 ℃: 100 A; at T C=100 ℃: 100A; at T A=25 ℃, RthJA=45 K/W2): 28A; (2)Pulsed drain current, ID,pulse T C=25 ℃: 200A; (3)Avalanche energy, single pulse, EAS, ID=50 A, R GS=25 Ω: 800 mJ; (4)Reverse diode dv /dt, dv /dt, at ID=50 A, VDS=24 V, di /dt =200 A/μs, T j,max=150 ℃: 6 kV/μs; (5)Gate source voltage, VGS: ±20 V; (6)Power dissipation, Ptot, at TC=25 ℃: 104 W; at T A=25 ℃, R thJA=45 K/W2): 2.8w; (7)Operating and storage temperature, T j, Tstg: -55 to 150 ℃; (8)IEC climatic category; DIN IEC 68-1: 55/150/56.

Features

BSC022N03SG features: (1)Fast switching MOSFET for SMPS; (2)Optimized technology for notebook DC/DC converters; (3)Qualified according to JEDEC1 for target applications; (4)Logic level / N-channel; (5)Excellent gate charge x R DS(on) product (FOM); (6)Very low on-resistance R DS(on); (7)Superior thermal resistance; (8)Avalanche rated; (9)dv /dt rated; (10)Pb-free lead plating; RoHS compliant.