(China (Mainland))
Product Summary
The BZV55-B11 is a zener diode.
Parametrics
BZV55-B11 absolute maximum ratings: (1)Power Dissipation at Tflange = 50℃: 500 mW; (2)Power Dissipation at TA = 50℃: 400 mW; (3)Junction Temperature: –65℃ to +200℃; (4)Storage Temperature Range: –65℃ to +200℃; (5)Continuous Forward Current: 250 mA; (6) Peak reverse power disipation (non-repetitive) tp=100μs:30W; (7) Thermal Resistance Junction to Ambient Air: 0.38K/mW; (8) Thermal Resistance Junction to Lead: 0.30 K/mW; (9) Forward Voltage at IF = 10 mA: 0.9 V.
Features
BZV55-B11 features: (1)Silicon Planar Power Zener Diodes; (2)For use as low voltage stabilizer or voltage reference; (3)The Zener voltages are graded according to the international E 24 standard Higher Zener voltages and 1% tolerance available on request; (4)Diodes available in these tolerance series: ±2% BZV55-B, ±3% BZV55-F, ±5% BZV55-C.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 |
 BZV55-B11 /T3 |
NXP Semiconductors |
Zener Diodes DIODE ZENER 2 PCT TAPE-13 |
Data Sheet |
Negotiable |
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BZV55-B11 T/R |
NXP Semiconductors |
Zener Diodes DIODE ZENER 2 PCT TAPE-7 |
Data Sheet |
Negotiable |
|
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|
BZV55-B11,115 |
NXP Semiconductors |
Zener Diodes DIODE ZENER 2 PCT |
Data Sheet |
|
|
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BZV55-B11,135 |
NXP Semiconductors |
Zener Diodes DIODE ZENER 2 PCT |
Data Sheet |
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