FDP4030L

N-Channel, Logic Level Enhancement Mode, Field Effect Transistor, DIP, 20 A, 30 V

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PartNumber:: FDP4030L

Brand:: National Semiconductor - NS | Pack: DIP | D/C: 10+

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Products Upload time: 2011-07-22

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Product Summary

These N-Channel enhancement mode power field effect transistor FDP4030L is produced using Fairchild proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance. The FDP4030L is particularly suited for low voltage applications such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.

Parametrics

FDP4030L absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Drain Current Continuous: 20 A; Pulsed: 60A; (4)PD Total Power Dissipation @ TC = 25℃ 37.5 W, Derate above 25℃: 0.25 W/℃; (5)TJ,TSTG Operating and Storage Temperature Range: -65 to 175 ℃; (6)TL Maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds: 275 ℃.

Features

FDP4030L features: (1)20 A, 30 V. RDS(ON) = 0.035Ω @ VGS=10 V; RDS(ON) = 0.055Ω @ VGS=4.5V.; (2)Critical DC electrical parameters specified at elevated temperature.; (3)Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.; (4)High density cell design for extremely low RDS(ON).; (5)175℃ maximum junction temperature rating.