(China (Mainland))
Product Summary
The FDR838P is a P-Channel 2.5V Specified PowerTrenchTM MOSFET. It is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. The applications of the FDR838P include Load switch, Motor driving, Power Management.
Parametrics
FDR838P absolute maximum ratings: (1)Drain-Source Voltage:-20 V; (2)Gate-Source Voltage:±8V; (3)Drain Current:Continuous:-8 A, Pulsed:-50A; (4)Power Dissipation for Single Operation:1.8 W, 1.0W, 0.9W; (5)Operating and Storage Junction Temperature Range:-55℃ to +150℃.
Features
FDR838P features: (1)-8 A, -20 V. RDS(ON)= 0.017Ω @ VGS = -4.5 V, RDS(ON)= 0.024Ω @ VGS = -2.5 V; (2)Low gate charge (30nC typical); (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)Small footprint (38% smaller than a standard SO-8); low profile package (1 mm thick); power handling capability similar to SO-8.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 FDR838P |
Fairchild Semiconductor |
MOSFET SSOT-8 P-CH -20V |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
|
FDR8305N |
Fairchild Semiconductor |
MOSFET SSOT-8 N-CH DUAL 20V |
Data Sheet |
Negotiable |
|
||||
 |
FDR8309P |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
|
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|
FDR8321L |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
FDR836P |
Fairchild Semiconductor |
MOSFET DISC BY MFG 2/02 |
Data Sheet |
Negotiable |
|
||||
|
FDR838P |
Fairchild Semiconductor |
MOSFET SSOT-8 P-CH -20V |
Data Sheet |
Negotiable |
|
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|
FDR842P_Q |
Fairchild Semiconductor |
MOSFET P-Ch PowerTrench Specified 1.8V |
Data Sheet |
Negotiable |
|
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