HFA3127B96

Transistor Array, 16-SOIC, 50V

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PartNumber:: HFA3127B96

Brand:: Harris Corporation - Harris | Pack: SOP | D/C: 97+

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Products Upload time: 2011-07-26

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Part Number:HFA3127B96
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Product Summary

The HFA3127B96 is an Ultra High Frequency Transistor Array. It is fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. The HFA3127B96 consists of five dielectrically isolated transistors on a common monolithic substrate. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. The device provides close electrical and thermal matching of the five transistors. The applications of the HFA3127B96 include VHF/UHF Amplifiers, VHF/UHF Mixers, IF Converters, Synchronous Detectors.

Parametrics

HFA3127B96 absolute maximum ratings: (1)Collector to Emitter Voltage (Open Base):8V; (2)Collector to Base Voltage (Open Emitter):12V; (3)Emitter to Base Voltage (Reverse Bias):5.5V; (4)Collector Current (100% Duty Cycle):18.5mA at TJ = 150℃, 34mA at TJ = 125℃, 37mA at TJ = 110℃; (5)Peak Collector Current (Any Condition):65mA; (6)Operating temperature range:-55℃ to +125℃; (7)Maximum Power Dissipation (Any One Transistor):0.15W; (8)Maximum Junction Temperature (Die):175℃; (9)Maximum Junction Temperature (Plastic Package):150℃; (10)Maximum Storage Temperature Range:-65℃ to 150℃; (11)Maximum Lead Temperature (Soldering 10s):300℃(SOIC - Lead Tips Only).

Features

HFA3127B96 features: (1)NPN Transistor (fT):8GHz; (2)NPN Current Gain (hFE):130; (3)NPN Early Voltage (VA):50V; (4)PNP Transistor (fT):5.5GHz; (5)PNP Current Gain (hFE):60; (6)PNP Early Voltage (VA):20V; (7)Noise Figure (50Ω) at 1.0GHz:3.5dB; (8)Collector to Collector Leakage:<1pA; (9)Complete Isolation Between Transistors; (10)Pin Compatible with Industry Standard 3XXX Series Arrays; (11)Pb-Free Plus Anneal Available (RoHS Compliant).