(China (Mainland))
Product Summary
The IRF1407STRLPBF is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF1407STRLPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRF1407STRLPBF is a surface mount power package capable of accommodating die sizes up to HEX-4.
Parametrics
IRF1407STRLPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 100 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 70 A; (3)IDM Pulsed Drain Current: 520 A; (4)PD @TC = 25℃ Power Dissipation: 3.8 W; (5)Linear Derating Factor: 1.3 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 390 mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.6 V/ns; (9)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175 ℃.
Features
IRF1407STRLPBF features: (1)Advanced Process Technology; (2)Ultra Low On-Resistance; (3)Dynamic dv/dt Rating; (4)175℃ Operating Temperature; (5)Fast Switching; (6)Repetitive Avalanche Allowed up to Tjmax.
Diagrams
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 IRF1407STRLPBF |
International Rectifier |
MOSFET MOSFT 75V 100A 7.8mOhm 160nC |
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IRF1 100 5% |
Vishay/Dale |
Power Inductors 100uH 5% |
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IRF1 560 10% |
Vishay/Dale |
Power Inductors 560uH 10% |
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Negotiable |
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