IRF2907ZSPBF

IRF2907ZSPBF, HEXFET Power MOSFET, 75V, 75A, D2PAK

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Price:: US $2.08~2.08 / piece [Get Latest Price]

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PartNumber:: IRF2907ZSPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 11+

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Products Upload time: 2012-10-09

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Part Number:IRF2907ZSPBF
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Product Summary

The IRF2907ZSPBF is a HEXFET Power MOSFET, which utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175℃ junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features of IRF2907ZSPBF combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF2907ZSPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 170 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 120 A; (3)Pulsed Drain Current, IDM: 680 A; (4)PD @TC = 25℃ Power Dissipation: 300 W; (5)Linear Derating Factor: 2.0 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Avalanche Current, IAR: See Fig.12a,12b,15,16 A; (8)Repetitive Avalanche Energy, EAR: See Fig.12a,12b,15,16 mJ; (9)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 to +175℃; (101)Soldering Temperature, for 10 seconds 300 (1.6mm from case)℃; (12)Mounting torque, 6-32 or M3 srew: 10 lbf·in (1.1N·m).

Features

IRF2907ZSPBF features: (1)Advanced Process Technology; (2)Ultra low on-resistance; (3)Fast Switching; (4)175℃ Operating Temperature; (5)Repetitive Avalanche Allowed up to Tjmax; (6)Lead-free.