IRF6612TRPBF

DirectFET Power MOSFET, 30V, 24A, 2.5mΩ, QFN, IRF6612TRPBF

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Price:: US $0.71~0.71 / piece [Get Latest Price]

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	US $0.71~0.71

PartNumber:: IRF6612TRPBF

Brand:: International Rectifier - IR | Pack: QFN | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-07-13

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Part Number:IRF6612TRPBF
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Product Summary

The IRF6612TRPBF is a DirectFET Power MOSFET. It combines the latest HEXFET Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package of the IRF6612TRPBF is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package of the IRF6612TRPBF allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.

Parametrics

IRF6612TRPBF absolute maximum ratings: (1)VDS Drain-to-Source Voltage: 30V; (2)VGS Gate-to-Source Voltage: ±20V; (3)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 136A; (4)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 24A; (5)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: 19A; (6)IDM Pulsed Drain Current: 190A; (7)EAS Single Pulse Avalanche Energy: 37mJ; (8)IAR Avalanche Current: 19A; (9)TJ TSTG Operating Junction and Storage Temperature Range: -40 to + 150 ℃.

Features

IRF6612TRPBF features: (1)RoHs Compliant; (2)Lead-Free (Qualified up to 260℃ Reflow); (3)Application Specific MOSFETs; (4)Ideal for CPU Core DC-DC Converters; (5)Low Conduction Losses; (6)High Cdv/dt Immunity; (7)Low Profile (<0.7mm); (8)Dual Sided Cooling Compatible; (9)Compatible with existing Surface Mount Techniques.