IRF6775MTRPBF

digital audio MOSFET, 150V, 4.9A, QFN, 3.0Ω, IRF6775MTRPBF

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Price:: US $1.14~1.14 / piece [Get Latest Price]

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	US $1.14~1.14

PartNumber:: IRF6775MTRPBF

Brand:: International Rectifier - IR | Pack: QFN | D/C: 10+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2012-07-13

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Part Number:IRF6775MTRPBF
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Product Summary

The IRF6775MTRPBF is a digital audio MOSFET. It is specifically designed for Class-D audio amplifier applications. The IRF6775MTRPBF utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI. The IRF6775MTRPBF utilizes DirectFETTM packaging technology.

Parametrics

IRF6775MTRPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 28 A; (2)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: 4.9 A; (3)IDM Pulsed Drain Current: 39 A; (4)PD @TC = 25℃ Power Dissipation: 89 W; (5)Linear Derating Factor: 0.022 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 33 mJ; (8)IAR Avalanche Current: 5.6 A; (9)TJ TSTG Operating Junction and Storage Temperature Range: -40 to + 150 ℃.

Features

IRF6775MTRPBF features: (1)Latest MOSFET Silicon technology; (2)Key parameters optimized for Class-D audio amplifier applications; (3)Low RDS(on) for improved efficiency; (4)Low Qg for better THD and improved efficiency; (5)Low Qrr for better THD and lower EMI; (6)Low package stray inductance for reduced ringing and lower EMI; (7)Can deliver up to 250W per channel into 4Ω Load in Half-Bridge Configuration Amplifier; (8)Dual sided cooling compatible; (9)Compatible with existing surface mount technologies; (10)RoHS compliant containing no lead or bromide; (11)Lead-Free (Qualified up to 260℃ Reflow).