Product Summary

The IRF7205TRPBF is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF7205TRPBF is well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The IRF7205TRPBF has been modified through a customized leadframe for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications.

Parametrics

IRF7205TRPBF absolute maximum ratings: (1)ID @ TA = 25℃ Continuous Drain Current, VGS @ 10V: -4.6 A; (2)ID @ TA = 70℃ Continuous Drain Current, VGS @ 10V: -3.7 A; (3)IDM Pulsed Drain Current: -15 A; (4)PD @TC = 25℃ Power Dissipation: 2.5 W; (5)Linear Derating Factor: 0.02 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 150 ℃.

Features

IRF7205TRPBF features: (1)Adavanced Process Technology; (2)Ultra Low On-Resistance; (3)P-Channel MOSFET; (4)Surface Mount; (5)Available in Tape & Reel; (6)Dynamic dv/dt Rating; (7)Fast Switching.

Diagrams

IRF7205TRPBF diagram

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