(China (Mainland))
Product Summary
The IRFD9020 is a 1-Watt rated power MOSFET in a 4-pin, dual-in-line package.
Parametrics
Absolute maximum ratings: (1)drain-source voltage: -50V; (2)drain-gate voltage(RGS=20kΩ): -50V; (3)ID @ TC=25℃ continous drain current: -1.6A; (4)ID @ TC=100℃ continous drain current: -0.99A; (5)gate-source voltage: ±20 V; (6)max. power dissipation: 1 W; (7)operating junction and storage temperature range: -65 to 150 ℃; (8)lead temperature: 300 ℃.
Features
Features: (1)For automatic insertion; (2)Compact, end stackable; (3)Fast switching; (4)Low drive current; (5)Easily paralleled; (6)Excellent temperature stability; (7)P-channel versatility.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRFD9020 |
Vishay/Siliconix |
MOSFET P-Chan 60V 1.6 Amp |
Data Sheet |
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IRFD9020, SiHFD9020 |
Other |
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Data Sheet |
Negotiable |
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IRFD9020PBF |
Vishay Semiconductors |
MOSFET P-Chan 60V 1.6 Amp |
Data Sheet |
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