IRFR9120NTRPBF

HEXFET power MOSFET, 100V, 6.6A, DPAK, 40W, IRFR9120NTRPBF

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Price:: US $0.19~0.19 / piece [Get Latest Price]

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PartNumber:: IRFR9120NTRPBF

Brand:: International Rectifier - IR | Pack: TO | D/C: 10+

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Products Upload time: 2012-07-13

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Product Summary

The IRFR9120NTRPBF is a HEXFET power MOSFET. It utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRFR9120NTRPBF is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The IRFR9120NTRPBF is designed for surface mounting using vapor phase, infrared, or wave soldering techniques.

Parametrics

IRFR9120NTRPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: -6.6 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: -4.2 A; (3)IDM Pulsed Drain Current: 26 A; (4)PD @TC = 25℃ Power Dissipation: 40 W; (5)Linear Derating Factor: 0.32 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)EAS Single Pulse Avalanche Energy: 100 mJ; (8)IAR Avalanche Current: -6.6 A; (9)EAR Repetitive Avalanche Energy: 4.0 mJ; (10)dv/dt Peak Diode Recovery dv/dt: 5.0 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 150 ℃; (12)Soldering Temperature, for 10 seconds: 300 (1.6mm from case ) ℃.

Features

IRFR9120NTRPBF features: (1)Ultra Low On-Resistance; (2)P-Channel; (3)Surface Mount; (4)Advanced Process Technology; (5)Fast Switching; (6)Fully Avalanche Rated.