(China (Mainland))
Product Summary
The KTA1268Y is an epitaxial planar PNP transistor. The device is suitable for low noise amplifier applciation and high voltage application.
Parametrics
KTA1268Y absolute maximum ratings: (1)collector base voltage, VCBO: -120V; (2)collector emitter voltage, VCEO: -120V; (3)emitter base voltage, VEBO: -5V; (4)collector current, IC: -100mA; (5)emitter current, IE: 100mA; (6)collector power dissipation, PC: 625mW; (7)junction temperature, Tj: 150℃; (8)storage temperature range, Tstg: -55 to 150℃.
Features
KTA1268Y features: (1)low noise; (2)high DC current gain: hFE=200~700; (3)high voltage, VCEO: -120V; (4)low pulse noise, low 1/f noise.
Diagrams
 |
 KTA1962A |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
KTA1862L |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
KTA1862D |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
KTA1837 |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
KTA1834L |
Other |
|
Data Sheet |
Negotiable |
|
||||
|
KTA1834D |
Other |
|
Data Sheet |
Negotiable |
|
||||
