Product Summary

The MMBT5551 is a NPN General Purpose Amplifier. This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.

Parametrics

MMBT5551 absolute maximum ratings: (1)VCEO, Collector-Emitter Voltage: 160 V; (2)VCBO, Collector-Base Voltage: 180 V; (3)VEBO, Emitter-Base Voltage: 6.0 V; (4)IC, Collector Current - Continuous: 600 mA; (5)TJ, Tstg, Operating and Storage Junction Temperature Range: -55 to +150℃.

Features

MMBT5551 features: (1)PD, Total Device Dissipation: 625mW; Derate above 25℃: 5.0mW/℃; (2)RθJC, Thermal Resistance, Junction to Case: 83.3℃/W; (3)RθJA, Thermal Resistance, Junction to Ambient: 200℃/W.

Diagrams

MMBT5551 dimension

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MMBT5551_Q
MMBT5551_Q

Fairchild Semiconductor

Transistors Bipolar (BJT) SOT-23 NPN GEN PUR

Data Sheet

Negotiable 
MMBT5551-7
MMBT5551-7

Diodes Inc.

Transistors Bipolar (BJT) SS NPN 300mW

Data Sheet

Negotiable 
MMBT5551-7-F
MMBT5551-7-F

Diodes Inc.

Transistors Bipolar (BJT) SS NPN 300mW

Data Sheet

0-1: $0.26
1-10: $0.17
10-100: $0.08
100-250: $0.06
MMBT5551LT1
MMBT5551LT1

ON Semiconductor

Transistors Bipolar (BJT) 600mA 160V NPN

Data Sheet

Negotiable 
MMBT5551LT1G
MMBT5551LT1G

ON Semiconductor

Transistors Bipolar (BJT) 600mA 160V NPN

Data Sheet

0-1: $0.14
1-25: $0.09
25-100: $0.07
100-500: $0.04
MMBT5551LT3
MMBT5551LT3

ON Semiconductor

Transistors Bipolar (BJT) 600mA 160V NPN

Data Sheet

Negotiable 
MMBT5551LT3G
MMBT5551LT3G

ON Semiconductor

Transistors Bipolar (BJT) 600mA 160V NPN

Data Sheet

0-1: $0.16
1-25: $0.08
25-100: $0.05
100-500: $0.04
MMBT5551M3T5G
MMBT5551M3T5G

ON Semiconductor

Transistors Bipolar (BJT) SOT-723 GP NPN TRANS

Data Sheet

0-1: $0.07
1-25: $0.06
25-100: $0.06
100-250: $0.05