(China (Mainland))
Product Summary
Parametrics
Series: -<br/>Transistor Type: NPN<br/>Resistor - Base (R1) (Ohms): -<br/>Resistor - Emitter Base (R2) (Ohms): -<br/>Frequency - Transition: 100MHz<br/>Mounting Type: Surface Mount<br/>Package / Case: TO-236-3, SC-59, SOT-23-3<br/>Packaging: Cut Tape (CT)Alternate Packaging<br/>Current - Collector (Ic) (Max): 500mA<br/>DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V<br/>Voltage - Collector Emitter Breakdown (Max): 80V<br/>Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA<br/>Power - Max: 350mW<br/>Supplier Device Package: SOT-23<br/>Current - Collector Cutoff (Max): 100nA<br/>Manufacturer: Fairchild Semiconductor<br/>
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MMBTA06 |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR |
Data Sheet |
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MMBTA06_D87Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Gen Purp Amp |
Data Sheet |
Negotiable |
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MMBTA06_L98Z |
Fairchild Semiconductor |
Transistors Bipolar (BJT) NPN Gen Purp Amp |
Data Sheet |
Negotiable |
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MMBTA06_Q |
Fairchild Semiconductor |
Transistors Bipolar (BJT) SOT-23 NPN GEN PUR |
Data Sheet |
Negotiable |
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MMBTA06-7 |
Diodes Inc. |
Transistors Bipolar (BJT) 80V 300mW |
Data Sheet |
Negotiable |
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MMBTA06-7-F |
Diodes Inc. |
Transistors Bipolar (BJT) 80V 300mW |
Data Sheet |
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MMBTA06-GS08 |
Vishay Semiconductors |
Transistors Bipolar (BJT) NPN Switching/Amp |
Data Sheet |
Negotiable |
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MMBTA06LT1 |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 80V NPN |
Data Sheet |
Negotiable |
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