(China (Mainland))
Product Summary
The MPSA29 is a NPN Silicon Darlington Transistor.
Parametrics
MPSA29 absolute maximum ratings: (1)Collector–Emitter Voltage VCES: 100 Vdc; (2)Collector–Base Voltage VCBO: 100 Vdc; (3)Emitter–Base Voltage VEBO: 12 Vdc; (4)Collector Current — Continuous IC: 500 mAdc; (5)Total Device Dissipation @ TA = 25℃, Derate above 25℃, PD: 625mW; 5.0 mW/℃; (6)Total Device Dissipation @ TC = 25℃, Derate above 25℃, PD: 1.5Watts; 12mW/℃; (7)Operating and Storage Junction, Temperature Range, TJ, Tstg:–55 to +150℃.
Features
MPSA29 features: (1)Collector–Emitter Breakdown Voltage (IC = 100 μAdc, VBE = 0), V(BR)CES: 100Vdc; (2)Collector–Base Breakdown Voltage (IC = 100 μAdc, IE = 0), V(BR)CBO:100Vdc; (3)Emitter–Base Breakdown Voltage (IE = 10 μAdc, IC = 0), V(BR)EBO: 12Vdc; (4)Collector Cutoff Current (VCB = 80 Vdc, IE = 0), ICBO: 100 nAdc; (5)Collector Cutoff Current, (VCE = 80 Vdc, VBE = 0), ICES: 500 nAdc; (6)Emitter Cutoff Current (VEB = 10 Vdc, IC = 0), IEBO: 100 nAdc.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 MPSA29G |
ON Semiconductor |
Transistors Darlington 500mA 100V NPN |
Data Sheet |
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MPSA29RLRPG |
ON Semiconductor |
Transistors Darlington 500mA 100V NPN |
Data Sheet |
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MPSA29RLRP |
ON Semiconductor |
Transistors Darlington 500mA 100V NPN |
Data Sheet |
Negotiable |
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MPSA29_Q |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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MPSA29_D75Z |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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MPSA29_D27Z |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
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MPSA29_D26Z |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
Negotiable |
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MPSA29 |
Fairchild Semiconductor |
Transistors Darlington NPN Transistor Darlington |
Data Sheet |
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