(China (Mainland))
Product Summary
The MPSA56RLRA is an Amplifier Transistor.
Parametrics
MPSA56RLRA asbolute maximum ratings: (1)Collector-Emitter Voltage, VCEO: 80Vdc; (2)Collector-Base Voltage, VCBO: 80Vdc; (3)Emitter-Base Voltage, VEBO: 4.0 Vdc; (4)Collector Current-Continuous: IC 500 mAdc; (5)Total Device Dissipation @ TA = 25℃, PD: 625mW; Derate above 25℃: 5.0mW/℃; (6)Total Device Dissipation,@ TC = 25℃, PD: 1.5Watts; (7)Derate above 25℃: 12mW/℃; (8)Operating and Storage Junction Temperature Range, TJ, Tstg: -55 to +150℃.
Features
MPSA56RLRA features: (1)Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0), V(BR)CEO: 80Vdc; (2)Emitter-Base Breakdown Voltage (IE = 100μAdc, IC = 0), V(BR)EBO: 4.0Vdc; (3)Collector Cutoff Current (VCE = 60 Vdc, IB = 0) ICES: 0.1μAdc; (4)Collector Cutoff Current, (VCB = 80 Vdc, IE = 0), ICBO: 0.1mAdc.
Diagrams
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 MPSA56RLRA |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 80V PNP |
Data Sheet |
Negotiable |
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MPSA56RLRAG |
ON Semiconductor |
Transistors Bipolar (BJT) 500mA 80V PNP |
Data Sheet |
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