Product Summary

The SI4410DY-T1-E3 is an N-channel 30-V (D-S) MOSFET.

Parametrics

SI4410DY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage, VDS: 30V; (2)Gate-Source Voltage, VGS: ±20V; (3)Continuous Drain Current (TJ = 150℃): TA=25℃, ID=10A, TA=70℃, ID= 8A; (4)Pulsed Drain Current: IDM= 50A; (5)Continuous Source Current (Diode Conduction): IS=2.3A; (6)Maximum Power Dissipation: TA=25℃, PD=2.5W, TA=70℃, PD=1.6W; (7)Operating Junction and Storage Temperature Range: -55℃ to +150℃.

Features

SI4410DY-T1-E3 feature: TrenchFET Power MOSFET.

Diagrams

SI4410DY-T1-E3 Pin Configuration

Si4401BDY
Si4401BDY

Other


Data Sheet

Negotiable 
SI4401BDY-T1-E3
SI4401BDY-T1-E3

Vishay/Siliconix

MOSFET 40V 10.5A 0.014Ohm

Data Sheet

0-1: $1.06
1-25: $0.84
25-50: $0.79
50-100: $0.76
SI4401BDY-T1-GE3
SI4401BDY-T1-GE3

Vishay/Siliconix

MOSFET 40V 10.5A 2.9W 14mohm @ 10V

Data Sheet

0-1: $1.06
1-10: $0.84
10-50: $0.80
50-100: $0.76
SI4401DDY-T1-GE3
SI4401DDY-T1-GE3

Vishay/Siliconix

MOSFET 40V 16.1A P-CH MOSFET

Data Sheet

0-1: $0.58
1-25: $0.44
25-100: $0.39
100-250: $0.34
SI4401DY
SI4401DY

Vishay/Siliconix

MOSFET 40V 10.5A 3W

Data Sheet

Negotiable 
SI4401DY-E3
SI4401DY-E3

Vishay/Siliconix

MOSFET 40V 10.5A 3W

Data Sheet

Negotiable