(China (Mainland))
Product Summary
The SI4412DY-T1 is an N-Channel, 30 V (D-S) MOSFET.
Parametrics
SI4412DY-T1 absolute maximum ratings: (1)Drain-Source Voltage: 30V; (2)Gate-Source Voltage: ±20V; (3)Continuous Drain Current: TA=25℃, 8A; TA=70℃, 6.4A; (4)Pulsed Drain Current: 30A; (5)Continuous Source Current(MOSFET Diode Conduction): 2.3A; (6)Power Dissipation: TA=25℃, 2.5W; TA=70℃, 1.6W; (7)Operating Junction and Storage Temperature Range: -55℃ to 150℃; (8) Maximum Junction-to-Ambient: 50℃/W.
Features
SI4412DY-T1 features: (1) Halogen-free According to IEC 61249-2-21 Definition; (2) TrenchFET Power MOSFET; (3) Compliant to RoHS Directive 2002/95/EC.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4412DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30 Volt 7.0 Amp 2.5W |
Data Sheet |
Negotiable |
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SI4412DY-T1-GE3 |
Vishay/Siliconix |
MOSFET 30V 7.0A 2.5W 28mohm @ 10V |
Data Sheet |
Negotiable |
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