Product Summary

The SI4824DY-TI is an Asymmetric N-Channel, Reduced Qg, Fast Switching MOSFET.

Parametrics

SI4824DY-TI absolute maxing ratings: (1)Drain-Source Voltage VDS: 30 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: ±4.7 A; (4)Pulsed Drain Current IDM: ±40 A; (5)Continuous Source Current (Diode Conduction) IS: 1.2 A; (6)Maximum Power Dissipation TA = 25℃ PD: 1.4 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.

Features

SI4824DY-TI specifications: (1)Gate Threshold Voltage VGS(th): 1.0 V; (2)Gate-Body Leakage IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current IDSS: -1 μA; (4)On-State Drain Current ID(on): 20 A; (6)Drain-Source On-State Resistance rDS(on): 0.033 to 0.040 Ω; (7)Forward Transconductance gfs: 12 S; (8)Diode Forward Voltage VSD: 0.7 to 1.2 V.

Diagrams

SI4824DY-TI diagram

Si4800
Si4800
Other

Data Sheet
Negotiable 
SI4800,518
SI4800,518

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Data Sheet
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Vishay/Siliconix
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Data Sheet
0-1: $0.46
1-25: $0.35
25-50: $0.33
50-100: $0.31
SI4800BDY-T1-GE3
SI4800BDY-T1-GE3
Vishay/Siliconix
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Data Sheet
0-1: $0.44
1-10: $0.31
10-50: $0.31
50-100: $0.30
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SI4800DY
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MOSFET 30V 9A 2.5W
Data Sheet
Negotiable 
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SI4800DY-E3
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
Negotiable