(China (Mainland))
Product Summary
The SI4947DY is a Dual P-Channel 30-V (D-S) Rated MOSFET.
Parametrics
SI4947DY absolute maxing ratings: (1)Drain-Source Voltage VDS: -30 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: ±3.5 A; (4)Pulsed Drain Current IDM: ±20 A; (5)Continuous Source Current (Diode Conduction) IS: -1.7 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.0 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.
Features
SI4947DY specifications: (1)Gate Threshold Voltage VGS(th): 1.0 V; (2)Gate-Body Leakage IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current IDSS: -1 μA; (4)On-State Drain Current ID(on): -15 A; (6)Drain-Source On-State Resistance rDS(on): 0.066 to 0.085 Ω; (7)Forward Transconductance gfs: 5.0 S; (8)Diode Forward Voltage VSD: -0.8 to -1.2 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 SI4947DY |
Vishay/Siliconix |
MOSFET 30V 3.5A 2W |
Data Sheet |
Negotiable |
|
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|
SI4947DY-E3 |
Vishay/Siliconix |
MOSFET 30V 3.5A 2W |
Data Sheet |
Negotiable |
|
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|
SI4947DY-T1-E3 |
Vishay/Siliconix |
MOSFET 30 Volt 3.5 Amp 2.0W |
Data Sheet |
Negotiable |
|
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