Product Summary

The SI9424DY is a P-Channel 2.5-V (G-S) MOSFET. The SI9424DY is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. The applications of the SI9424DY include DC/DC converter, Load switch, Battery Protection.

Parametrics

SI9424DY absolute maximum ratings: (1)Drain-Source Voltage: -20V; (2)Gate-Source Voltage: ±9V; (3)Continuous Drain Current (TJ = 150℃): TA=25℃,±7.7A; TA=70℃, ±6.2A; (4)Pulsed Drain Current: ±30A; (5)Continuous Source Current (Diode Conduction): -2.3A; (6)Maximum Power Dissipation: TA=25℃,2.5W; TA=70℃, 1.6W; (7)Operating Junction and Storage Temperature Range: -55℃ to 150℃.

Features

SI9424DY features: (1)-8.0 A, -20 V. RDS(on) = 0.024Ω @ VGS = -4.5V, RDS(on) = 0.032Ω @ VGS = -2.5 V; (2)Low gate charge (23nC typical); (3)Fast switching speed; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.

Diagrams

SI9424DY Pin Configuration

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