(China (Mainland))
Product Summary
The SI9430DY-T1 is a P-Channel 30-V (D-S) MOSFET. The attached spice model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55℃ to 125℃ temperature ranges under the pulsed 0V to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage.
Parametrics
SI9430DY-T1 specifications: (1) Gate Threshold Voltage: 2.2V; (2) On-State Drain Current: 117A; (3) Drain-Source On-State Resistance: 0.033Ω; (4) Forward Transconductance: 9.3S; (5) Diode Forward Voltage: -0.76V.
Features
SI9430DY-T1 features: (1)P-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55℃ to 125℃ Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.
Diagrams
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 SI9400DY |
Vishay/Siliconix |
MOSFET 20V 2.5A 2.5W |
Data Sheet |
Negotiable |
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SI9407AEY |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3.0W 120mohm @ 10V |
Data Sheet |
Negotiable |
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