(China (Mainland))
Product Summary
The SI9430DY-TI is a P-Channel 30-V (D-S) MOSFET. It is extracted and optimized over the -55 to 125℃ temperature ranges under the pulsed 0 to 5V gate drive. The saturated output impedance is best fit at the gate bias near the threshold voltage. The SI9430DY-TI is optimized to provide a best fit to the measured electrical data and are not intended as an exact physical interpretation of the device.
Parametrics
SI9430DY-TI specifications: (1)Gate Threshold Voltage VGS(th): 2.2 V; (2)On-State Drain Currenta ID(on): 117 A; (3)Drain-Source On-State Resistancea rDS(on): 0.033 Ω; (4)Forward Transconductance gfs: 9.3 S; (8)Diode Forward Voltage VSD: -0.76 V.
Features
SI9430DY-TI features: (1)P-Channel Vertical DMOS; (2)Macro Model (Subcircuit Model); (3)Level 3 MOS; (4)Apply for both Linear and Switching Application; (5)Accurate over the -55 to 125℃ Temperature Range; (6)Model the Gate Charge, Transient, and Diode Reverse Recovery Characteristics.
Diagrams
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 SI9400DY |
Vishay/Siliconix |
MOSFET 20V 2.5A 2.5W |
Data Sheet |
Negotiable |
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SI9407AEY |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1-E3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3W |
Data Sheet |
Negotiable |
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SI9407AEY-T1-GE3 |
Vishay/Siliconix |
MOSFET 60V 3.5A 3.0W 120mohm @ 10V |
Data Sheet |
Negotiable |
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