(China (Mainland))
Product Summary
The SI9956DY is a Dual N-Channel 20-V (D-S) MOSFET.
Parametrics
SI9956DY absolute maxing ratings: (1)Drain-Source Voltage VDS: 20 V; (2)Gate-Source Voltage VGS: ±20 V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: ±3.5 A; (4)Pulsed Drain Current IDM: ±14 A; (5)Continuous Source Current (Diode Conduction) IS: 1.7 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.0 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.
Features
SI9956DY specifications: (1)Gate Threshold Voltage VGS(th): 1.0 V; (2)Gate-Body Leakage IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current IDSS: 2 μA; (4)VDS = 16 V, VGS = 0 V, TJ = 55℃ 25; (5)On-State Drain Current ID(on): 14 A; (6)Drain-Source On-State Resistance rDS(on): 0.082 to 0.10 Ω; (7)Forward Transconductance gfs: 6.5 S; (8)Diode Forward Voltage VSD: 0.75 to 1.2 V.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI9956DY |
Vishay/Siliconix |
MOSFET 20V 3.5A 2W |
Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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SI9910DJ-E3 |
Vishay/Siliconix |
Power Driver ICs MOSFET Driver |
Data Sheet |
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SI9926BDY-T1-E3 |
Vishay/Siliconix |
MOSFET 20 Volt 8.2 Amp 2.0W |
Data Sheet |
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SI9926BDY-T1-GE3 |
Vishay/Siliconix |
MOSFET 20V 8.2A 2.0W 20mohm @ 4.5V |
Data Sheet |
Negotiable |
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SI9926ADY-T1-E3 |
Vishay/Siliconix |
MOSFET 20 Volt 6.0 Amp 2.0W |
Data Sheet |
Negotiable |
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SI9926BDY-E3 |
Vishay/Siliconix |
MOSFET NCh Dual MOSFET 2.5V |
Data Sheet |
Negotiable |
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SI9926DY |
Fairchild Semiconductor |
MOSFET SO8 DUAL NCH 20V |
Data Sheet |
Negotiable |
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