(China (Mainland))
Product Summary
The 2SD2686 is a Transistor. It is designed for Solenoid Drive and Motor Drive Applications.
Parametrics
2SD2686 absolute maximum ratings: (1)Collector-base voltage VCBO: 50 V; (2)Collector-emitter voltage VCEO: 60±10 V; (3)Emitter-base voltage VEBO: 8 V; (4)Collector current DC IC: 1 A, Pulse ICP: 3 A; (5)Base current IB: 0.5 A; (6)Collector power dissipation DC: 1.0 W; (7)Junction temperature Tj: 150 ℃; (8)Storage temperature range Tstg: -55 to 150 ℃.
Features
2SD2686 features: (1)High DC current gain: hFE = 2000 (min) (VCE = 2 A, IC = 1 A); (2)Zener diode included between collector and base.
Diagrams
 |
 2SD2000 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||
|
2SD2120 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||
|
2SD2121 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||
|
2SD2121(L) |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||||
 |
2SD2212T100 |
ROHM Semiconductor |
Transistors Darlington DARL NPN 60V 2A |
Data Sheet |
|
|
||||||||||||||
 |
2SD2470TP |
ROHM Semiconductor |
Transistors Darlington NPN 10V 5A |
Data Sheet |
Negotiable |
|
||||||||||||||
