(China (Mainland))
Product Summary
The BSC059N03SG is an optiMOS Power-Transistor.
Parametrics
BSC059N03SG maximum ratings: (1)Continuous drain current, ID at TC=25 ℃: 73 A; at TC=100 ℃: 46A; at TA=25 ℃, RthJA=45 K/W: 17.5A; (2)Pulsed drain current, ID,pulse TC=25 ℃: 200A; (3)Avalanche energy, single pulse, EAS, ID=50 A, RGS=25 Ω: 150 mJ; (4)Reverse diode dv/dt, dv /dt, at ID=50 A, VDS=24 V, di /dt =200 A/μs, Tj,max=150 ℃: 6 kV/μs; (5)Gate source voltage, VGS: ±20 V; (6)Power dissipation, Ptot, at TC=25 ℃: 4 W; at TA=25 ℃, R thJA=45 K/W: 2.8w; (7)Operating and storage temperature, Tj, Tstg: -55 to 150 ℃; (8)IEC climatic category; DIN IEC 68-1: 55/150/56.
Features
BSC059N03SG features: (1)Fast switching MOSFET for SMPS; (2)Optimized technology for notebook DC/DC converters; (3)Qualified according to JEDEC1 for target applications; (4)Logic level / N-channel; (5)Excellent gate charge x R DS(on) product (FOM); (6)Very low on-resistance R DS(on); (7)Superior thermal resistance; (8)Avalanche rated dv /dt rated; (9)Pb-free lead plating; RoHS compliant.
Diagrams
 |
 BSC010N04LS |
Infineon Technologies |
MOSFET 40V Super S08 |
Data Sheet |
Negotiable |
|
||||||||||||
|
BSC010N04LSI |
Infineon Technologies |
MOSFET 40V Super S08 |
Data Sheet |
Negotiable |
|
||||||||||||
|
BSC010NE2LS |
Infineon Technologies |
MOSFET N-Channel 25V MOSFET |
Data Sheet |
|
|
||||||||||||
 |
BSC011N03LS |
Infineon Technologies |
MOSFET N-CH 30V 100A |
Data Sheet |
|
|
||||||||||||
 |
BSC011N03LSIXT |
Infineon Technologies |
MOSFET OptiMOS Power MOSFET |
Data Sheet |
|
|
||||||||||||
 |
BSC020N03LS G |
Infineon Technologies |
MOSFET N-CH 30 V 100 A |
Data Sheet |
|
|
||||||||||||
