(China (Mainland))
Product Summary
The FCP20N60 is a 600V N-Channel MOSFET. It uses an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
Parametrics
FCP20N60 absolute maximum ratings: (1)VDSS Drain-Source Voltage: 600V; (2)ID Drain Current- Continuous(TC=25℃): 20A; (TC=100℃): 12.5A; (3)IDM Drain Current- Pulsed: 60A; (4)VGSS Gate-Source voltage: ±30V; (5)EAS Single Pulsed Avalanche Energy: 690mJ; (6)IAR Avalanche Current: 20A; (7)EAR Repetitive Avalanche Energy: 20.8mJ; (8)dv/dt Peak Diode Recovery dv/dt: 4.5V/ns; (9)PD Power Dissipation(T=25℃): 208W; Derate above 25℃：1.67W/℃; (10)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (11)TL Maximum Lead Temperature for Soldering Purpose,1/8 from Case for 5 Second: 300℃.
Features
FCP20N60 features: (1)650V @ Tj = 150℃; (2)Typ. RDS(on)=0.15Ω; (3)Ultra low gate charge (typ. Qo=75nC); (4)Low effective output capacitance (typ. Coss.eff=165pF); (5)100% avalanche tested.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FCP20N60FS |
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MOSFET N-CH 600V TO220-3 |
Data Sheet |
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FCP20N60_F080 |
Fairchild Semiconductor |
MOSFET Trans N-Ch 600V 20A 3-Pin 3+Tab |
Data Sheet |
Negotiable |
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FCP20N60 |
Fairchild Semiconductor |
MOSFET 600V N-Channel SuperFET |
Data Sheet |
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