Product Summary

Parametrics

Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
FET Feature: Standard
Packaging: Tape & Reel (TR)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Current - Continuous Drain (Id) @ 25° C: 5.7A
Gate Charge (Qg) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Manufacturer: Fairchild Semiconductor
Series: QFET™
Rds On (Max) @ Id, Vgs: 690 mOhm @ 2.85A, 10V
Input Capacitance (Ciss) @ Vds: 770pF @ 25V

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQD7P20TF
FQD7P20TF

Fairchild Semiconductor

MOSFET 200V P-Channel QFET

Data Sheet

Negotiable 
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
FQD7N10
FQD7N10

Other


Data Sheet

Negotiable 
FQD7N10L
FQD7N10L

Other


Data Sheet

Negotiable 
FQD7N10LTF
FQD7N10LTF

Fairchild Semiconductor

MOSFET 100V N-Ch QFET Logic Level

Data Sheet

Negotiable 
FQD7N10LTM
FQD7N10LTM

Fairchild Semiconductor

MOSFET 100V N-Ch QFET Logic Level

Data Sheet

0-1: $0.33
1-25: $0.29
25-100: $0.26
100-250: $0.22
FQD7N10TF
FQD7N10TF

Fairchild Semiconductor

MOSFET

Data Sheet

Negotiable 
FQD7N10TM
FQD7N10TM

Fairchild Semiconductor

MOSFET 100V N-Ch QFET

Data Sheet

Negotiable