(China (Mainland))
Product Summary
The IRFB4110GPBF is a HEXFET power MOSFET. It is used in High Efficiency Synchronous Rectification in SMPS, uninterruptible Power Supply, high Speed Power Switching, hard Switched and High Frequency Circuits.
Parametrics
IRFB4110GPBF absolute maximum ratings: (1)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 180 A; (2)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 130 A; (3)IDM Pulsed Drain Current: 670 A; (4)PD @TC = 25℃ Power Dissipation: 370 W; (5)Linear Derating Factor: 2.5 W/℃; (6)VGS Gate-to-Source Voltage: ±20 V; (7)dv/dt Peak Diode Recovery: 5.3 V/ns; (11)TJ TSTG Operating Junction and Storage Temperature Range: -55 to + 175 ℃; (12)Soldering Temperature, for 10 seconds(1.6mm from case ): 300 ℃.
Features
IRFB4110GPBF features: (1)Improved Gate, Avalanche and Dynamic dv/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free, (5)Halogen-Free.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 IRFB4110GPBF |
International Rectifier |
MOSFET MOSFT 100V 180A 4.5mOhm 150nC |
Data Sheet |
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IRFB4110GPBF |
International Rectifier |
MOSFET MOSFT 100V 180A 4.5mOhm 150nC |
Data Sheet |
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