Product Summary

The SI9934DY-T1 is a Dual P-Channel 2.5-V (G-S) MOSFET.

Parametrics

SI9934DY-T1 absolute maxing ratings: (1)Drain-Source Voltage VDS: -12 V; (2)Gate-Source Voltage VGS: ±8 V; (3)Continuous Drain Current (TJ = 150℃) TA = 25℃ ID: ±5 A; (4)Pulsed Drain Current IDM: ±20 A; (5)Continuous Source Current (Diode Conduction) IS: -1.7 A; (6)Maximum Power Dissipation TA = 25℃ PD: 2.0 W; (7)Operating Junction and Storage Temperature Range TJ, Tstg: –55 to 150 ℃.

Features

SI9934DY-T1 specifications: (1)Gate Threshold Voltage VGS(th): -0.6 V; (2)Gate-Body Leakage IGSS: ±100 nA; (3)Zero Gate Voltage Drain Current IDSS: -1 μA; (4)On-State Drain Current ID(on): -20 A; (5)Drain-Source On-State Resistance rDS(on): 0.039 to 0.05 Ω; (6)Forward Transconductance gfs: 16 S; (7)Diode Forward Voltage VSD: -0.75 to -1.2 V.

Diagrams

SI9934DY-T1 diagram

SI9926CDY-T1-GE3
SI9926CDY-T1-GE3
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Data Sheet
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50-100: $0.61
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Data Sheet
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Data Sheet
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SI9936BDY-T1-GE3
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Data Sheet
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1-10: $0.61
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Data Sheet
Negotiable